Part Number Hot Search : 
D45H11G 2SC39 L2003 100TS ABPX1101 FAN5631 100TS AD55701
Product Description
Full Text Search

50C02CH-16 - Bipolar Transistor

50C02CH-16_9040418.PDF Datasheet


 Full text search : Bipolar Transistor


 Related Part Number
PART Description Maker
TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
Bourns, Inc.
IRG4BC29K IRG4BC30K IRG4BC30 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
IRF[International Rectifier]
AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-310 TERM BLOCK HDR 5.08MM 3POS PCB
Low Current/ High Performance NPN Silicon Bipolar Transistor
Low Current High Performance NPN Silicon Bipolar Transistor
Low Current, High Performance NPN Silicon Bipolar Transistor
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
STC03DE170HP07 STC03DE170HP Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
ST Microelectronics
STMicroelectronics
AT-42036 AT-42036-TR1 AT-42036-BLK AT-42036 · General purpose transistor
Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
GT15M321 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
TOSHIBA[Toshiba Semiconductor]
MJD18002D2 MJD18002D2T4 MJD18002D2T4G POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS Bipolar NPN Transistor
ON Semiconductor
HBDM60V600W-7 COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER
Diodes Incorporated
EMX28 Low frequency transistor, complex (2-elements) Bipolar Transistor
ROHM[Rohm]
STC06IE170HV Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?/a>
Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15 Ohm
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17з
http://
ST Microelectronics, Inc.
STMicroelectronics
IRGB4064DPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRF[International Rectifier]
 
 Related keyword From Full Text Search System
50C02CH-16 applications 50C02CH-16 Corporate 50C02CH-16 wire 50C02CH-16 Series 50C02CH-16 configuration
50C02CH-16 Type 50C02CH-16 Table 50C02CH-16 byte 50C02CH-16 Audio 50C02CH-16 Reset
 

 

Price & Availability of 50C02CH-16

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.78508996963501